Ferroelectric memory device

ABSTRACT

A ferroelectric memory device includes a memory cell array having memory cells arranged in a matrix form. Each of the memory cells includes a cell transistor and a ferroelectric capacitor. It further includes a first dummy bit line arranged outside a bit line arranged on an end portion of the memory cell array and separated from the bit line arranged on the end portion of the memory cell array with an interval which is the same as a pitch between the bit lines in the memory cell array and having the same width as the bit line, and a first dummy memory cell connected to the first dummy bit line and having the same structure as the memory cell.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. application Ser. No.10/461,367, filed Jun. 16, 2003, now U.S. Pat. No. 6,822,891 the entirecontents of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to a ferroelectric memory device which storesdata in a nonvolatile fashion by use of a ferroelectric capacitor.

2. Description of the Related Art

A ferroelectric memory device stores binary data in a nonvolatilefashion according to the intensity of residual dielectric polarizationof a ferroelectric capacitor. A memory cell of a conventionalferroelectric memory device is configured by connecting theferroelectric capacitor and a transistor in series as in the case of aDRAM, for example. However, unlike the DRAM, since data is helddepending on the intensity of residual dielectric polarization in theferroelectric memory device, it is necessary to drive a plate line inorder to read out signal charges onto a bit line. Therefore, in theconventional ferroelectric memory device, a plate line driving circuitis required to have a large area.

In order to cope with the above problem, a cell array system of theferroelectric memory device which can reduce the area of the plate linedriving circuit has been proposed by Takashima et al. (D. Takashima etal., “High-density chain ferroelectric random memory (CFRAM)” in Proc.VSLI Symp., June 1997, pp. 83–84). In the above cell array system, amemory cell is configured by respectively connecting two ends of theferroelectric capacitor to the source and drain of a cell transistor,and a plurality of memory cells with the same configuration as describedabove are serially connected to configure a memory cell block. In theseries connected TC unit type ferroelectric RAM, since the plate linedriving circuit can be commonly used by eight memory cells, for example,the memory cell array can be integrated with a high integration density.

In the series connected TC unit type ferroelectric RAM with the aboveconfiguration, it is a common practice to arrange a dummy bit lineoutside the memory cell array and use the dummy bit line as a shieldline by fixing the dummy bit line at ground potential, for example, soas to prevent occurrence of noise from the exterior of the memory cellarray.

Further, a ferroelectric memory device in which a dummy bit line isarranged on the exterior of the memory cell array to compensate forcapacitive coupling of the bit line on the end portion of the memorycell array has been proposed (Jpn. Pat. Appln. KOKAI Publication10-200061).

It is known that the influence of noise (hereinafter referred to ascoupling noise) caused by parasitic capacitance between wirings occurswhen data which is read out onto the bit line arranged in the memorycell array is sensed. When two bit lines are arranged on both sides of abit line with the same pitch and if the amount of coupling noise givento the bit line from one of the two bit lines is δ, the amount ofcoupling noise 2δ occurs by taking the coupling noise δ given from theother bit line into consideration.

However, in the case of the bit line arranged on the end portion of thememory cell array, no coupling noise is given to the bit line from thedummy bit line fixed at the ground potential. Therefore, only thecoupling noise δ from one bit line is given to the bit line arranged onthe end portion of the memory cell array. For example, when data issensed in a two transistor-two capacitor (2T2C) system and if “1” isread out onto the bit line arranged on the end portion of the memorycell array and “0” is read out onto the adjacent bit line, thedifference between the readout potentials is reduced by δ and, as aresult, the sense margin is reduced by δ.

Thus, there occurs a problem that the sense margin is reduced due to animbalance of coupling noise between the bit lines arranged on the endportion of the memory cell array, the retention characteristic isdegraded and the yield rate is lowered.

BRIEF SUMMARY OF THE INVENTION

A ferroelectric memory device according to an aspect of the presentinvention includes a memory cell array having memory cells arranged in amatrix form. Each of the memory cells includes a cell transistor and aferroelectric capacitor, one of source and drain regions of the celltransistor being electrically connected to a corresponding one of bitlines, a gate of the cell transistor being electrically connected to acorresponding one of word lines, the other one of the source and drainregions of the cell transistor being electrically connected to oneelectrode of the ferroelectric capacitor, the other electrode of theferroelectric capacitor being electrically connected to a correspondingone of plate lines. It further includes a first dummy bit line arrangedoutside a bit line arranged on an end portion of the memory cell arrayand separated from the bit line arranged on the end portion of thememory cell array with an interval which is the same as a pitch betweenthe bit lines in the memory cell array and having the same width as thebit line, and a first dummy memory cell electrically connected to thefirst dummy bit line and having the same structure as the memory cell.

A ferroelectric memory device according to another aspect of the presentinvention includes a first memory cell array having memory cellsarranged in a matrix form. Each of memory cells includes a celltransistor and a ferroelectric capacitor, one of source and drainregions of the cell transistor being electrically connected to acorresponding one of bit lines, a gate of the cell transistor beingelectrically connected to a corresponding one of word lines, the otherone of the source and drain regions of the cell transistor beingelectrically connected to one electrode of the ferroelectric capacitor,the other electrode of the ferroelectric capacitor being electricallyconnected to a corresponding one of plate lines. It includes a secondmemory cell array arranged adjacent to the first memory cell array tocommonly use the bit lines electrically connected to the first memorycell array and having the same structure as the first memory cell array.Further, it includes a first dummy bit line arranged outside a bit linearranged on an end portion of the first memory cell array and separatedfrom the bit line arranged on the end portion of the first memory cellarray with an interval which is the same as the pitch between the bitlines in the first memory cell array and having the same width as thebit line, a first dummy memory cell electrically connected to the firstdummy bit line and having the same structure as the memory cell. Itincludes a second dummy bit line arranged outside a bit line arranged onan end portion of the second memory cell array and separated from thebit line arranged on the end portion of the second memory cell arraywith an interval which is the same as the pitch between the bit lines inthe second memory cell array and having the same width as the bit line,and a second dummy memory cell electrically connected to the seconddummy bit line and having the same structure as the memory cell.

A ferroelectric memory device according to still another aspect of thepresent invention includes a memory cell array having memory cellsarranged in a matrix form. Each of the memory cells includes a celltransistor and a ferroelectric capacitor, one of source and drainregions of the cell transistor being electrically connected to acorresponding one of bit lines, a gate of the cell transistor beingelectrically connected to a corresponding one of word lines, the otherone of the source and drain regions of the cell transistor beingelectrically connected to one electrode of the ferroelectric capacitor,the other electrode of the ferroelectric capacitor being electricallyconnected to a corresponding one of plate lines. Further, it includes adummy bit line arranged outside a bit line arranged on an end portion ofthe memory cell array, a capacitor having one electrode electricallyconnected to the dummy bit line, and a dummy bit line driving circuithaving an output terminal electrically connected to the other electrodeof the capacitor and input terminals electrically connected to the platelines, respectively, and detecting drive of the plate lines.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

FIG. 1 is a circuit diagram showing a memory cell block MCB whichconfigure a series connected TC unit type ferroelectric RAM according toa first embodiment of this invention;

FIG. 2 is an operation timing diagram in the 2T2C system of the memorycell block MCB shown in FIG. 1;

FIG. 3 is an operation timing diagram in the 1T1C system of the memorycell block MCB shown in FIG. 1;

FIG. 4 is a schematic circuit diagram showing the configuration of themain portion of the series connected TC unit type ferroelectric RAMaccording to the first embodiment of this invention;

FIG. 5 is a diagram showing one example of parasitic capacitances Cbbbetween the respective bit lines in the 2T2C system of the seriesconnected TC unit type ferroelectric RAM shown in FIG. 4 and couplingnoise δ caused by the parasitic capacitance Cbb;

FIG. 6 is a diagram showing one example of parasitic capacitances Cbbbetween the respective bit lines in the 1T1C system of the seriesconnected TC unit type ferroelectric RAM shown in FIG. 4 and couplingnoise δ caused by the parasitic capacitance Cbb;

FIG. 7 is a diagram showing the other example of parasitic capacitancesCbb between the respective bit lines in the 1T1C system of the seriesconnected TC unit type ferroelectric RAM shown in FIG. 4 and couplingnoise δ caused by the parasitic capacitance Cbb;

FIG. 8 is a schematic circuit diagram showing the configuration of themain portion of a series connected TC unit type ferroelectric RAMaccording to a second embodiment of this invention;

FIG. 9 is a schematic circuit diagram showing the configuration of themain portion of a series connected TC unit type ferroelectric RAMaccording to a third embodiment of this invention;

FIG. 10 is a schematic circuit diagram showing a modification of theseries connected TC unit type ferroelectric RAM shown in FIG. 9;

FIG. 11 is a schematic circuit diagram showing the configuration of themain portion of a series connected TC unit type ferroelectric RAMaccording to a fourth embodiment of this invention;

FIG. 12 is a schematic circuit diagram showing the configuration of themain portion of a series connected TC unit type ferroelectric RAMaccording to a fifth embodiment of this invention;

FIG. 13 is a plan view showing the main portion of a series connected TCunit type ferroelectric RAM according to a sixth embodiment of thisinvention;

FIG. 14 is a cross sectional view taken along the 14–14′ line of FIG.13;

FIG. 15 is a schematic circuit diagram showing the configuration of themain portion of the series connected TC unit type ferroelectric RAMshown in FIG. 13;

FIG. 16 is a schematic circuit diagram showing the configuration of themain portion of a series connected TC unit type ferroelectric RAMaccording to a seventh embodiment of this invention; and

FIG. 17 is a diagram showing the main portion of another example of aferroelectric memory device.

DETAILED DESCRIPTION OF THE INVENTION

There will now be described embodiments of this invention with referenceto the accompanying drawings. In the following explanation, constituentshaving the same function and configuration are denoted by the samereference symbols and the repetitive explanation is made only whennecessary.

FIRST EMBODIMENT

FIG. 1 is a circuit diagram showing memory cell blocks MCB whichconfigure a series connected TC unit type ferroelectric RAM according toa first embodiment of this invention.

A memory cell MC is configured by connecting a ferroelectric capacitor Cand a cell transistor T in parallel. The memory cell block MCB isconfigured by electrically connecting, for example, eight memory cellswith the same structure as the memory cell MC in series. In FIG. 1, twomemory blocks MCB0, MCB1 which are electrically connected to a pair ofbit lines BL, /BL, respectively, are shown. The phrase “electricallyconnected to” is replaced hereinafter by “connected to”.

One-side ends of the memory blocks MCB0, MCB1 are respectively connectedto the bit lines BL, /BL via block selection transistors BST0, BST1. Theother ends of the memory blocks MCB0, MCB1 are respectively connected toplate lines PL, /PL. The gate of the cell transistor T of each memorycell block MCB is connected to a corresponding one of word lines WL0 toWL7. The gates of the block selection transistors BST0, BST1 arerespectively connected to block selection signal lines BSL0, BSL1.

Two systems, that is, a 2T2C system of holding one-bit data by use oftwo cell transistors and two ferroelectric capacitors and a 1T1C systemof holding one-bit data by use of one cell transistor and oneferroelectric capacitor are provided as a data holding system of theferroelectric memory device. The series connected TC unit typeferroelectric RAM shown in FIG. 1 has a configuration to which both ofthe 2T2C system and 1T1C system can be commonly applied.

In the 1T1C system, a reference voltage generating circuit RVG whichgenerates reference voltage includes dummy word transistors DWT1, DWT2and a reference capacitor RC. One of the electrodes of the referencecapacitor RC is connected to a dummy plate line DPL. The other electrodeof the reference capacitor RC is connected to sources/drains of thedummy word transistors DWT1, DWT2. The drain/source of the dummy wordtransistor DWT1 is connected to the bit line /BL. The drain/source ofthe dummy word transistor DWT2 is connected to the bit line BL. The gateof the dummy word transistor DWT1 is connected to a dummy word lineDWL1. The gate of the dummy word transistor DWT2 is connected to a dummyword line DWL2.

The bit lines BL, /BL are connected to a sense amplifier circuit SAwhich senses and amplifies readout data.

FIG. 2 is an operation timing diagram in the 2T2C system of the memorycell block MCB with the above configuration. It is assumed that thememory cell MC stores a state in which the residual dielectricpolarization of the ferroelectric capacitor C is positive as data “1”and stores a state in which the residual dielectric polarization thereofis negative as data “0”. At the standby time, all of the word lines WLare kept at “H”, the block selection signal lines BSL0, BSL1 are kept at“L” and the bit lines BL, /BL and plate lines PL, /PL are kept at VSS(ground potential). At this time, two terminals of the ferroelectriccapacitor C are short-circuited by the cell transistor which is set inthe ON state so as to stably hold data.

At the active time, for example, when the memory cell MC on the bit lineBL side is selected by use of the word line WL2, the bit line BL is setinto an electrically floating state, the word line WL2 is set to “L”,then the block selection signal line BSL0 is set to “H” and the plateline PL is raised from VSS (ground potential) to VAA (positivepotential). As a result, voltage is applied to the ferroelectriccapacitor C of the selected memory cell MC and signal voltage is readout onto the bit line BL according to the data “0”, “1”. In this case,data which is complementary to data stored in the memory cell MC on thebit line BL side is stored in the memory cell MC on the bit line /BLside selected by the word line WL2. Therefore, signal voltage is readout onto the bit line /BL according to the data “0”, “1” in the samemanner as described above by setting the block selection signal lineBSL1 to “H”.

The signal voltages read out onto the bit lines BL, /BL are comparedwith each other and the compared data is amplified by the senseamplifier circuit SA which is activated and the data “0”, “1” is sensed.After this, the sense amplifier circuit SA is deactivated and thereadout data is rewritten.

In the readout and rewriting operations, the destructive readoutoperation is performed in the case of “1” data and the nondestructivereadout operation is performed in the case of “0” data. That is, in thecase of “1” data, the amount of residual dielectric polarization of theferroelectric capacitor is greatly reduced by application of positivevoltage from the plate line and inversion of polarization occurs. Then,if the plate line voltage is lowered after the readout operation, avoltage opposite to that at the readout time is applied to theferroelectric capacitor to rewrite the data since the bit line is set athigh potential by the readout data. In the case of “0” data, inversionof polarization due to the plate line voltage does not occur, theopposite voltage is not applied after the readout operation and data ofthe original negative residual dielectric polarization state isrewritten.

FIG. 3 is an operation timing diagram in the 1T1C system of the memorycell block MCB shown in FIG. 1.

At the active time, for example, when the memory cell MC on the bit lineBL side is selected by use of the word line WL2, the bit line BL is setinto an electrically floating state, the word line WL2 is set to “L”,then the block selection signal line BSL0 is set to “H” and the plateline PL is raised from VSS (ground potential) to VAA (positivepotential). Further, the dummy word line DWL1 is set to “H” andreference voltage is applied to the bit line /BL.

The signal voltage read out onto the bit line BL is compared with thereference voltage and the compared data is amplified by the senseamplifier circuit SA which is activated and data “0”, “1” is sensed.

FIG. 4 is a schematic circuit diagram showing the configuration of themain portion of the series connected TC unit type ferroelectric RAMaccording to the first embodiment of this invention.

A plurality of memory cell blocks which have the same configuration asthe memory cell blocks MCB0, MCB1 shown in FIG. 1 are arranged toconfigure a memory cell array MCA.

Bit lines BL0, /BL0 are connected to data lines DQ0, /DQ0 via dataselection transistors DST0, DST1. The gates of the data selectiontransistors DST0, DST1 are connected to a column decoder CD (not shown)and a column selection signal is applied thereto via a column selectionsignal line CSL0 to output data via the data lines DQ0, /DQ0.

Dummy bit lines DummyBL and Dummy/BL are respectively arranged outsidethe memory cell array MCA and separated from the bit line BL0 which isarranged on the end portion of the memory cell array MCA with aninterval which is the same as the pitch between the paired bit lines inthe memory cell array MCA. The Dummy bit lines DummyBL and Dummy/BLrespectively have the same width as the bit line in the memory cellarray MCA. Memory cell blocks MCB are connected to the respective dummybit lines DummyBL, Dummy/BL and a reference voltage generating circuitRVG and sense amplifier circuit SA are connected. Further, data linesand a column gate are not connected to the dummy bit lines DummyBL,Dummy/BL.

The operation of the 2T2C system of the series connected TC unit typeferroelectric RAM with the above configuration is explained below. FIG.5 is a diagram showing parasitic capacitances Cbb between the respectivebit lines and coupling noise δ caused by the parasitic capacitance Cbb.

In order to read out data stored in the memory cell MC connected to theword line WLn, potential VAA (positive potential) is applied to theplate lines PL, /PL. For example, it is assumed that data “1” is readout onto the dummy bit line DummyBL and bit lines BL0, BL1. In the caseof the 2T2C system, data “0” is read out onto the dummy bit lineDummy/BL and bit lines /BL0, /BL1.

If VAA (positive potential) is applied to the plate lines PL, /PL anddata is read out onto the respective bit lines, coupling noises δ areinstantaneously caused on the respective bit lines by the presence ofthe parasitic capacitances Cbb between the respective bit lines. The bitline /BL0 receives the coupling noise of 2δ from the adjacent bit linesBL0 and BL1. Further, since the dummy bit lines DummyBL, Dummy/BL areprovided, the bit line BL0 disposed on the end portion of the memorycell array MCA also receives the coupling noise of 2δ from the adjacentdummy bit line Dummy/BL and bit line /BL0.

As a result, when data read out from the paired bit lines BL0, /BL0 issensed by the sense amplifier circuit SA, readout potentials of “1” dataof the bit line BL0 and “0” data of the bit line /BL0 are both increasedby 2δ. Therefore, as in the case of the bit lines in the memory cellarray MCA, an imbalance in the coupling noise will not occur on the bitline BL0.

FIG. 6 is a diagram showing one example of parasitic capacitances Cbbbetween the respective bit lines in the 1T1C system and coupling noise δcaused by the parasitic capacitance Cbb.

For example, assume that data “1” is read out onto the dummy bit lineDummyBL and bit lines BL0, BL1. In the case of the 1T1C system, thereference voltage RV is applied to the dummy bit line Dummy/BL and bitlines /BL0, /BL1. If VAA (positive potential) is applied to the platelines PL, /PL, coupling noises δ are instantaneously caused on therespective bit lines by the presence of the parasitic capacitances Cbbbetween the respective bit lines. Therefore, as in the case of the 2T2Csystem, the bit line BL0 disposed on the end portion of the memory cellarray MCA receives the coupling noise of 2δ from the adjacent dummy bitline Dummy/BL and bit line /BL0.

Next, in the 1T1C system, for example, assume that data “0” is read outonto the dummy bit line Dummy/BL and bit lines /BL0, /BL1. FIG. 7 is adiagram showing parasitic capacitances Cbb between the respective bitlines in the above case and coupling noise δ caused by the parasiticcapacitance Cbb.

In the case of the 1T1C system, if “0” data is read out onto the dummybit line Dummy/BL and bit lines /BL0, /BL1, the reference voltage RV isapplied to the dummy bit line DummyBL and bit lines BL0, BL1. If VAA(positive potential) is applied to the plate lines PL, /PL, couplingnoises δ are instantaneously caused on the respective bit lines by thepresence of the parasitic capacitances Cbb between the respective bitlines. Therefore, as in the case of the 2T2C system, the bit line BL0disposed on the end portion of the memory cell array MCA receives thecoupling noise of 2δ from the adjacent dummy bit line Dummy/BL and bitline /BL0.

As described above, in the present embodiment, the dummy bit linesDummyBL and Dummy/BL are arranged outside and apart from the bit lineBL0 disposed on the end portion of the memory cell array MCA with aninterval which is the same as the pitch between the paired bit lines inthe memory cell array MCA. The Dummy bit lines DummyBL and Dummy/BLrespectively have the same width as the bit line in the memory cellarray MCA. Further, the sense amplifier circuit SA is connected to thedummy bit lines DummyBL, Dummy/BL and data lines are not connected tothe dummy bit lines.

Therefore, according to the present embodiment, an imbalance in thecoupling noise occurring on the bit line disposed on the end portion ofthe memory cell array MCA can be suppressed. As a result, a reduction inthe sense margin of the sense amplifier circuit SA can be prevented anddata can be correctly sensed.

Further, since the sense amplifier circuit SA is connected to the dummybit lines DummyBL, Dummy/BL, the same operation as that of the bit linesin the memory cell array MCA can be attained. Therefore, the samecoupling noise as that occurring on the other bit line in the memorycell array MCA can be caused on the bit line BL0.

Further, since the data lines DQ are not connected to the dummy bitlines DummyBL, Dummy/BL, an extra circuit can be omitted and the circuitspace can be reduced.

SECOND EMBODIMENT

In a second embodiment of this invention, paired dummy bit lines arearranged outside the memory cell array MCA and a dummy bit lineconnected to VSS (ground potential) is further arranged outside thepaired dummy bit lines.

FIG. 8 is a schematic circuit diagram showing the configuration of themain portion of a series connected TC unit type ferroelectric RAMaccording to the second embodiment of this invention. The configurationof the memory cell array MCA and paired dummy bit lines DummyBL1,Dummy/BL1 is the same as that in the first embodiment.

A dummy bit line Dummy/BL0 is disposed outside the dummy bit lineDummyBL1 and separated from the dummy bit line DummyBL1 with an intervalwhich is the same as the pitch between the paired bit lines in thememory cell array MCA. The potential of the dummy bit line Dummy/BL0 isfixed at VSS (ground potential).

As in the first embodiment, in the series connected TC unit typeferroelectric RAM with the above configuration, an imbalance in thecoupling noise occurring on the bit line BL0 can be eliminated. Further,in order to prevent noise from the exterior from being applied to thememory cell array MCA and paired dummy bit lines DummyBL1, Dummy/BL1,the dummy bit line Dummy/BL0 fixed at VSS (ground potential) isprovided.

Therefore, according to the present embodiment, an imbalance in thecoupling noise occurring on the bit line disposed on the end portion ofthe memory cell array MCA can be eliminated. As a result, a reduction inthe sense margin of the sense amplifier circuit SA can be prevented anddata can be correctly sensed.

Further, the dummy bit line Dummy/BL0 functions as a shield line and canprevent occurrence of noise from the exterior of the memory cell arrayMCA.

Even if the interval between the dummy bit lines DummyBL1 and Dummy/BL0is not the same as the pitch between the paired bit lines in the memorycell array MCA, no particular problem occurs.

THIRD EMBODIMENT

FIG. 9 is a schematic circuit diagram showing the configuration of themain portion of a series connected TC unit type ferroelectric RAMaccording to a third embodiment of this invention. The configuration ofa memory cell block MCB is the same as that of the first embodiment.

A plurality of memory cell blocks MCB are arranged to configure memorycell arrays MCA1, MCA2. The memory cell blocks MCB in the memory cellarrays MCA1 and MCA2 are connected together by use of a common bit line.A sense amplifier circuit SA is connected between the respective commonpaired bit lines lying between the memory cell arrays MCA1 and MCA2. Acolumn decoder CD is connected to each sense amplifier circuit SA.

A cell array selection transistor AST1 is inserted into that portion ofthe bit line BL0 which lies between the memory cell array MCA1 and thesense amplifier circuit SA. Further, a cell array selection transistorAST2 is inserted into that portion of the bit line BL0 which liesbetween the memory cell array MCA2 and the sense amplifier circuit SA.The gate of the cell array selection transistor AST1 is connected to amemory cell array selection line ASL1. The gate of the cell arrayselection transistor AST2 is connected to a memory cell array selectionline ASL2. Likewise, cell array selection transistors AST1, AST2 areconnected to the other bit lines. The memory cell arrays MCA1, MCA2 canbe selected by use of memory cell array selection lines ASL1, ASL2 andeach sense amplifier circuit SA and each column decoder CD can becommonly used.

A dummy bit line Dummy/BL is arranged outside the memory cell array MCA1and separated from the bit line BL0 disposed on the end portion of thememory cell array MCA1 with an interval corresponding to the pitchbetween the paired bit lines in the memory cell array MCA1. The Dummybit line Dummy/BL has the same width as the bit line in the memory cellarray MCA1. A memory cell block MCB and a reference voltage generatingcircuit RVG1 are connected to the dummy bit line Dummy/BL. The referencevoltage generating circuit RVG1 is configured by a dummy word transistorDWTn and reference capacitor RCn. One of the electrodes of the referencecapacitor RCn is connected to a dummy plate line DPLn. The otherelectrode of the reference capacitor RCn is connected to thesource/drain of the dummy word transistor DWTn. The drain/source of thedummy word transistor DWTn is connected to the dummy bit line Dummy/BL.

A dummy bit line DummyBL is arranged outside the memory cell array MCA2and separated from the bit line BL0 disposed on the end portion of thememory cell array MCA2 with an interval corresponding to the pitchbetween the paired bit lines in the memory cell array MCA2. The Dummybit line DummyBL has the same width as the bit line in the memory cellarray MCA2. A memory cell block MCB and a reference voltage generatingcircuit RVG2 are connected to the dummy bit line DummyBL. The referencevoltage generating circuit RVG2 is configured by a dummy word transistorDWTm+1 and reference capacitor RCm. One of the electrodes of thereference capacitor RCm is connected to a dummy plate line DPLm. Theother electrode of the reference capacitor RCm is connected to thesource/drain of the dummy word transistor DWTm+1. The drain/source ofthe dummy word transistor DWTm+1 is connected to the dummy bit lineDummyBL.

The dummy bit lines DummyBL and Dummy/BL are connected to a senseamplifier circuit SA. The memory cell block MCB which is connected tothe dummy bit line Dummy/BL is connected to the word lines which arearranged for the memory cell array MCA1. The memory cell block MCB whichis connected to the dummy bit line DummyBL is connected to the wordlines which are arranged for the memory cell array MCA2. Thus,architecture that the pair of dummy bit lines DummyBL and Dummy/BL isconnected to different word lines, respectively, is referred to as openbit-line architecture.

In the series connected TC unit type ferroelectric RAM with the aboveconfiguration, the bit line BL0 on the memory cell array MCA1 sidereceives coupling noise of 2δ from the adjacent bit line /BL0 and dummybit line Dummy/BL.

Further, the bit line BL0 on the memory cell array MCA2 side receivescoupling noise of 2δ from the adjacent bit line /BL0 and dummy bit lineDummyBL.

As described above, in the present embodiment, in the series connectedTC unit type ferroelectric RAM in which the bit lines and senseamplifier circuits SA are commonly used, one of the two memory cellarrays MCA1, MCA2 is selected and data is sensed, one of the paireddummy bit lines DummyBL and Dummy/BL is arranged outside the memory cellarray MCA1 with an interval which is the same as the pitch between thepaired bit lines in the memory cell array MCA1. The other dummy bit lineis arranged outside the memory cell array MCA2 with an interval which isthe same as the pitch between the paired bit lines in the memory cellarray MCA2. Further, the Dummy bit lines DummyBL and Dummy/BLrespectively have the same width as the bit line.

Therefore, according to the present embodiment, an imbalance in thecoupling noise occurring on the bit line disposed on the end portion ofeach memory cell array MCA can be eliminated. As a result, a reductionin the sense margin of the sense amplifier circuit SA can be preventedand data can be correctly sensed.

Further, since the paired bit lines are formed of an open form andarranged for each memory cell array MCA, an increase in the chip areacan be suppressed in comparison with the case wherein the paired dummybit lines are arranged for the respective memory cell arrays MCA.

Further, a dummy bit line DummyBL0 whose potential is fixed at VSS(ground potential) can be arranged outside the paired dummy bit linesDummyBL, Dummy/BL. FIG. 10 is a schematic circuit diagram showing theconfiguration of the main portion of the series connected TC unit typeferroelectric RAM with the above configuration.

The dummy bit line Dummy/BL0 is arranged outside the paired dummy bitlines DummyBL, Dummy/BL with the same pitch as that between the pairedbit lines in the memory cell array MCA.

With the above configuration, noise from the exterior to the memory cellarray MCA and paired dummy bit lines DummyBL, Dummy/BL can be prevented.

Even if the interval at which the dummy bit line Dummy/BL0 is arrangedis not the same as the pitch between paired bit lines in the memory cellarray MCA, no particular problem occurs.

FOURTH EMBODIMENT

In a fourth embodiment of this invention, a dummy bit line is arrangedoutside the memory cell array MCA and reference voltage is applied tothe dummy bit line.

FIG. 11 is a schematic circuit diagram showing the configuration of themain portion of a series connected TC unit type ferroelectric RAMaccording to the fourth embodiment of this invention. The configurationof the memory cell array MCA is the same as that in the firstembodiment.

A dummy bit line Dummy/BL is arranged outside the memory cell array MCAand separated from a bit line BL0 disposed on the end portion of thememory cell array MCA with an interval corresponding to the pitchbetween the paired bit lines in the memory cell array MCA. A memory cellblock MCB is arranged with respect to the dummy bit line Dummy/BL, butit is not connected to the dummy bit line Dummy/BL and plate line PL.

One of the electrodes of a reference capacitor C1 is connected to thedummy bit line Dummy/BL. The other electrode of the reference capacitorC1 is connected to plate lines PL, /PL via an OR circuit. For example,the capacitance of the capacitor C1 is set so that an intermediate valueof readout potentials of “1” data and “0” data will be applied to thedummy bit line Dummy/BL.

In the series connected TC unit type ferroelectric RAM with the aboveconfiguration, reference voltage is applied to the dummy bit lineDummy/BL at the active time. Therefore, coupling noise δ from the bitline /BL0 and coupling noise δ′ from the dummy bit line Dummy/BL basedon the reference voltage occur in the bit line BL0.

Thus, according to the present embodiment, an imbalance in the couplingnoise occurring in the bit line arranged on the end portion of thememory cell array MCA can be suppressed.

Further, since only one dummy bit line is used, the chip area can bereduced in comparison with the case wherein the paired dummy bit linesare arranged.

In the present embodiment, the OR circuit is used as an example of acircuit which detects drive of the plate lines PL, /PL. But this is notlimitative. Any circuit will do as long as it can detect drive of theplate lines PL, /PL.

FIFTH EMBODIMENT

In a fifth embodiment of this invention, a dummy memory cell block DMCBis arranged outside a memory cell array MCA.

FIG. 12 is a schematic circuit diagram showing the configuration of themain portion of a series connected TC unit type ferroelectric RAMaccording to the fifth embodiment of this invention. The configurationof the memory cell array MCA is the same as that of the firstembodiment.

The dummy memory cell block DMCB is arranged outside the memory cellarray MCA. A dummy bit line which is generally arranged outside thememory cell array MCA and whose potential is fixed at VSS is eliminated.

In the series connected TC unit type ferroelectric RAM with the aboveconfiguration, the influence caused by the wiring capacitance from thedummy bit line which is fixed at VSS and given to the bit line BL0 iseliminated. As a result, the capacitance associated with the bit lineBL0 is made smaller in comparison with capacitances associated with bitlines in the memory cell array MCA.

Thus, according to the present embodiment, coupling noise with respectto the bit line BL0 from the other bit lines in the memory cell arrayMCA becomes larger. Therefore, an imbalance in the coupling noise of thebit line BL0 can be suppressed.

SIXTH EMBODIMENT

FIG. 13 is a plan view showing the main portion of a series connected TCunit type ferroelectric RAM according to a sixth embodiment of thisinvention. FIG. 14 is a cross sectional view taken along the 14–14′ lineof FIG. 13.

A stitch area is formed in an internal portion of a memory cell arrayMCA (which is a portion between bit lines /BLn+1 and BLn+2 in thisembodiment). The stitch area is provided to suppress the delay ofsignals of word lines WL and block selection line BSL. Metal wirings(three-layered metal wirings M1, M2, M3 in this embodiment) are arrangedparallel to the word lines WL and block selection line BSL. Further, thestitch area is provided to connect the gate wirings GC to the metalwirings every predetermined memory cell blocks MCB.

The configuration of the stitch area is explained by taking a word lineWL1 as an example. A gate wiring WL1 (GC) is connected to afirst-layered metal wiring WL1 (M1) 2 via a plug 1. The metal wiring WL1(M1) 2 is connected to a second-layered metal wiring WL1 (M2) 4 via aplug 3. The metal wiring WL1 (M2) 4 is connected to a third-layeredmetal wiring WL1 (M3) via a plug 5.

FIG. 15 is a schematic circuit diagram showing the configuration of themain portion of the series connected TC unit type ferroelectric RAMshown in FIG. 13.

Dummy bit lines DummyBL, Dummy/BL are arranged on both sides of thestitch area. The dummy bit lines DummyBL, Dummy/BL are respectivelyseparated from adjacent bit lines /BLn+1, BLn+2 with an intervalcorresponding to the pitch between paired bit lines in the memory cellarray MCA. The Dummy bit lines DummyBL and Dummy/BL respectively havethe same width as the bit line in the memory cell array MCA. Memory cellblocks MCB are respectively connected to the dummy bit lines DummyBL,Dummy/BL and a reference voltage generating circuit RVG and senseamplifier circuit SA are connected therebetween. In this case, datalines and a column gate are not connected to the dummy bit linesDummyBL, Dummy/BL.

In the series connected TC unit type ferroelectric RAM with the aboveconfiguration, the pitch between the bit lines /BLn+1 and BLn+1 is equalto the pitch between the bit line /BLn+1 and the dummy bit line DummyBL.Therefore, the bit line /BLn+1 receives the same coupling noise δ fromthe bit lines lying on both sides thereof. This applies to the bit lineBLn+2.

As described above, in the present embodiment, in order to eliminate animbalance in the coupling noise between the bit lines caused by formingthe stitch area in the memory cell array MCA, the dummy bit linesDummyBL, Dummy/BL are arranged on both sides of the stitch area.Further, the Dummy bit lines DummyBL and Dummy/BL respectively have thesame width as the bit line in the memory cell array MCA.

Therefore, according to the present embodiment, the pitches between eachof the bit lines /BLn+1, BLn+2 and the bit lines arranged on both sidesof each of the bit lines /BLn+1, BLn+2 can be made equal to each otherand an imbalance in the coupling noise occurring on the bit lines/BLn+1, BLn+2 can be suppressed. As a result, a reduction in the sensemargin of the sense amplifier circuit SA can be prevented and data canbe correctly sensed.

Further, since the sense amplifier circuit SA is connected to the dummybit lines DummyBL, Dummy/BL, the same operation as that of the bit linesin the memory cell array MCA can be attained. Therefore, the samecoupling noise as that of the other bit lines can be caused with respectto the bit line BL0.

Further, since the data lines DQ are not connected to the dummy bitlines DummyBL, Dummy/BL, an extra circuit can be omitted and the spaceof the circuit can be reduced.

SEVENTH EMBODIMENT

In a seventh embodiment of this invention, dummy bit line pairs arearranged on both sides of a stitch area formed in a memory cell arrayMCA. Therefore, an imbalance in the coupling noise occurring on a bitline according to provide the stitch area is suppressed.

FIG. 16 is a schematic circuit diagram showing the configuration of themain portion of a series connected TC unit type ferroelectric RAMaccording to the seventh embodiment of this invention. The configurationof the stitch area is the same as that of the sixth embodiment.

The dummy bit line pairs are arranged on both sides of the stitch area.The paired dummy bit lines DummyBLn, Dummy/BLn are arranged between thestitch area and a bit line /BLn and intervals between the bit line /BLnand the dummy bit line DummyBLn and between the dummy bit lines DummyBLnand Dummy/BLn are set equal to an interval which is the same as thepitch between the paired bit lines in the memory cell array MCA. TheDummy bit lines DummyBLn and Dummy/BLn respectively have the same widthas the bit line in the memory cell array MCA. Memory cell blocks MCB arerespectively connected to the dummy bit lines DummyBLn, Dummy/BLn and areference voltage generating circuit RVG and sense amplifier circuit SAare connected therebetween. In this case, data lines and a column gateare not connected to the dummy bit lines DummyBL, Dummy/BL.

The dummy bit lines DummyBLn+1, Dummy/BLn+1 are arranged between thestitch area and the bit line BLn+1. The other configuration is the sameas that of the dummy bit lines DummyBLn, Dummy/BLn.

In the series connected TC unit type ferroelectric RAM with the aboveconfiguration, the interval between the bit line /BLn and the dummy bitline DummyBLn and the interval between the dummy bit lines DummyBLn andDummy/BLn are equal to the pitch between the paired bit lines in thememory cell array MCA. Therefore, since the wiring parasitic capacitancebetween the bit line /BLn and the dummy bit line DummyBLn becomes equalto the wiring parasitic capacitance between the paired dummy bit linesDummyBLn and Dummy/BLn. AS a result, coupling noise with respect to thebit line /BLn from the dummy bit line Dummy/BLn other bit lines is thesame as coupling noise between the paired dummy bit lines in the memorycell array MCA.

Thus, according to the present embodiment, in addition to the effectobtained in the seventh embodiment, an imbalance in the coupling noisecaused by the wiring parasitic capacitance between the paired dummy bitlines DummyBLn and Dummy/BLn can be suppressed with respect to the bitline /BLn. This applies to the bit line BLn+1.

The series connected parallel-TC unit type ferroelectric memories of theabove embodiments are explained to have the common configuration for the2T2C system and 1T1C system, but it can be formed with a configurationwhich can be applied only to one of the 2T2C system and 1T1C system.

Further, in the above embodiments, a case wherein the series connectedTC unit type ferroelectric RAM is used as an example of theferroelectric memory device is explained, but this is not limitative.FIG. 17 is a diagram showing the main portion of another example of theferroelectric memory device.

The gate of a transistor T is connected to a word line WL. The source ordrain region of the transistor T is connected to a bit line BL. Thedrain or source region of the transistor T is connected to one of theelectrodes of a ferroelectric capacitor C. The other electrode of theferroelectric capacitor C is connected to a plate line to form a memorycell MC′. That is, the transistor T and ferroelectric capacitor C areconnected in series. A plurality of memory cells having the sameconfiguration as that of the above memory cell are arranged to configurea memory cell array. When applying a ferroelectric memory device withthe above configuration to the above embodiments, the same effect can beattained.

Additional advantages and modifications will readily occur to thoseskilled in the art. Therefore, the invention in its broader aspects isnot limited to the specific details and representative embodiments shownand described herein. Accordingly, various modifications may be madewithout departing from the spirit or scope of the general inventiveconcept as defined by the appended claims and their equivalents.

1. A ferroelectric memory device comprising: a memory cell array havinga plurality of memory cells arranged in a matrix form, the memory cellsincluding a cell transistor and a ferroelectric capacitor, one of sourceand drain regions of the cell transistor being electrically connected toa corresponding one of a plurality of bit lines, a gate of the celltransistor being electrically connected to a corresponding one of aplurality of word lines, the other one of the source and drain regionsof the cell transistor being electrically connected to one electrode ofthe ferroelectric capacitor, the other electrode of the ferroelectriccapacitor being electrically connected to a corresponding one of aplurality of plate lines; a plurality of auxiliary word linescorresponding to the word lines and arranged in parallel to the wordlines above the memory cell array; a stitch portion arranged in thememory cell array and electrically connected to the word lines andauxiliary word lines; a first dummy bit line arranged between the stitchportion and one of two bit lines disposed on both sides of the stitchportion, and separated from the bit line among the two bit lines with aninterval which is the same as a pitch between the bit lines in thememory cell array, the first dummy bit line having the same width as thebit line; a first dummy memory cell electrically connected to the firstdummy bit line and including a cell transistor and a ferroelectriccapacitor; a second dummy bit line arranged between the stitch portionand the other one of the two bit lines disposed on both sides of thestitch portion, and separated from the other bit line among the two bitlines with the interval, the second dummy bit line having the same widthas the bit line; and a second dummy memory cell electrically connectedto the second dummy bit line and including a cell transistor and aferroelectric capacitor.
 2. The ferroelectric memory device according toclaim 1, further comprising a sense amplifier circuit configured tosense a signal based on potentials of the first and second dummy bitlines, wherein data, which is data complementary to data transferred tothe first dummy memory cell, is transferred to the second dummy memorycell.
 3. The ferroelectric memory device according to claim 1, furthercomprising a third dummy bit line arranged between the stitch portionand the first dummy bit line, and separated from the first dummy bitline with the interval, the third dummy bit line having the same widthas the bit line, a third dummy memory cell electrically connected to thethird dummy bit line and including a cell transistor and a ferroelectriccapacitor, a fourth dummy bit line arranged between the stitch portionand the second dummy bit line, and separated from the second dummy bitline with the interval, the fourth dummy bit line having the same widthas the bit line, and a fourth dummy memory cell electrically connectedto the fourth dummy bit line and including a cell transistor and aferroelectric capacitor.
 4. The ferroelectric memory device according toclaim 3, further comprising a first sense amplifier circuit configuredto sense a signal based on potentials of the first and third dummy bitlines, and a second sense amplifier circuit configured to sense a signalbased on potentials of the second and fourth dummy bit lines, whereindata, which is data complementary to data transferred to the first dummymemory cell, is transferred to the third dummy memory cell, and data,which is data complementary to data transferred to the second dummymemory cell, is transferred to the fourth dummy memory cell.
 5. Aferroelectric memory device comprising: a memory cell array having aplurality of memory cell blocks arranged in a matrix form, each of thememory cell blocks including a plurality of memory cells connectedbetween first and second terminals in series, the first terminal beingelectrically connected to a corresponding one of a plurality of bitlines via a block selection transistor, the second terminal beingelectrically connected to a corresponding one of a plurality of platelines, each of the memory cells including a cell transistor having asource region, a drain region and a gate electrode electricallyconnected to a corresponding one of a plurality of word lines, and aferroelectric capacitor having electrodes electrically connected to thesource and drain regions; a plurality of auxiliary word linescorresponding to the word lines and arranged in parallel to the wordlines above the memory cell array; a stitch portion arranged in thememory cell array and electrically connected to the word lines andauxiliary word lines; a first dummy bit line arranged between the stitchportion and one of two bit lines disposed on both sides of the stitchportion, and separated from the bit line among the two bit lines with aninterval which is the same as a pitch between the bit lines in thememory cell array, the first dummy bit line having the same width as thebit line; a first dummy memory cell block electrically connected to thefirst dummy bit line and including a plurality of cell transistors and aplurality of ferroelectric capacitors; a second dummy bit line arrangedbetween the stitch portion and the other one of the two bit linesdisposed on both sides of the stitch portion, and separated from theother bit line among the two bit lines with the interval, the seconddummy bit line having the same width as the bit line; and a second dummymemory cell block electrically connected to the second dummy bit lineand including a plurality of cell transistors and a plurality offerroelectric capacitors.
 6. The ferroelectric memory device accordingto claim 5, further comprising a sense amplifier circuit configured tosense a signal based on potentials of the first and second dummy bitlines, wherein data, which is data complementary to data transferred tothe first dummy memory cell block, is transferred to the second dummymemory cell block.
 7. The ferroelectric memory device according to claim5, further comprising a third dummy bit line arranged between the stitchportion and the first dummy bit line, and separated from the first dummybit line with the interval, the third dummy bit line having the samewidth as the bit line, a third dummy memory cell block electricallyconnected to the third dummy bit line and including a plurality of celltransistors and a plurality of ferroelectric capacitors, a fourth dummybit line arranged between the stitch portion and the second dummy bitline, and separated from the second dummy bit line with the interval,the fourth dummy bit line having the same width as the bit line, and afourth dummy memory cell block electrically connected to the fourthdummy bit line and including a plurality of cell transistors and aplurality of ferroelectric capacitors.
 8. The ferroelectric memorydevice according to claim 7, further comprising a first sense amplifiercircuit configured to sense a signal based on potentials of the firstand third dummy bit lines, and a second sense amplifier circuitconfigured to sense a signal based on potentials of the second andfourth dummy bit lines, wherein data, which is data complementary todata transferred to the first dummy memory cell block, is transferred tothe third dummy memory cell block, and data, which is data complementaryto data transferred to the second dummy memory cell block, istransferred to the fourth dummy memory cell block.